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A new lifetime extrapolation technique for LDD NMOSFETS under hot-carrier degradation

dc.contributor.authorDreesen, R.
dc.contributor.authorCroes, Kris
dc.contributor.authorManca, Jean
dc.contributor.authorDe Ceuninck, Ward
dc.contributor.authorDe Schepper, Luc
dc.contributor.authorPergoot, A.
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-06T11:07:19Z
dc.date.available2021-10-06T11:07:19Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3436
dc.sourceIIOimport
dc.titleA new lifetime extrapolation technique for LDD NMOSFETS under hot-carrier degradation
dc.typeProceedings paper
dc.contributor.imecauthorDe Ceuninck, Ward
dc.contributor.imecauthorGroeseneken, Guido
dc.source.peerreviewno
dc.source.beginpage584
dc.source.endpage587
dc.source.conferenceESSDERC'99 - Proceedings of the 29th European Solid-State Device Research Conference; 13-15 September 1999; Leuven, Belgium.
imec.availabilityPublished - imec


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