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Quantitative 3-D model to explain large single trap charge variability in vertical NAND memory
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Authors
Verreck, Devin
;
Arreghini, Antonio
;
Bastos, Joao
;
Schanovsky, Franz
;
Mitterbauer, Ferdinand
;
Kernstock, C.
;
Karner, Markus
;
Degraeve, Robin
;
Van den Bosch, Geert
;
Furnemont, Arnaud
Conference
IEEE International Electron Devices Meeting - IEDM
Title
Quantitative 3-D model to explain large single trap charge variability in vertical NAND memory
Publication type
Proceedings paper
Embargo date
9999-12-31
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