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3D TCAD model for poly-Si channel current and variability in vertical NAND flash memory

dc.contributor.authorVerreck, Devin
dc.contributor.authorArreghini, Antonio
dc.contributor.authorSchanovsky, Franz
dc.contributor.authorStanojevic, Zlatan
dc.contributor.authorSteiner, K.
dc.contributor.authorMitterbauer, F.
dc.contributor.authorKarner, Markus
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorFurnemont, Arnaud
dc.date.accessioned2021-10-27T22:42:05Z
dc.date.available2021-10-27T22:42:05Z
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/34377
dc.sourceIIOimport
dc.title3D TCAD model for poly-Si channel current and variability in vertical NAND flash memory
dc.typeProceedings paper
dc.contributor.imecauthorVerreck, Devin
dc.contributor.imecauthorArreghini, Antonio
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.imecauthorFurnemont, Arnaud
dc.contributor.orcidimecVerreck, Devin::0000-0002-3833-5880
dc.contributor.orcidimecArreghini, Antonio::0000-0002-7493-9681
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.contributor.orcidimecFurnemont, Arnaud::0000-0002-6378-1030
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.conferenceInternational Conference on Simulation of Semiconductor Processes and Devices - SISPAD
dc.source.conferencedate4/09/2019
dc.source.conferencelocationUdine Italy
imec.availabilityPublished - open access


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