Publication:

Low-frequency noise behavior of nMOSFETs with different Al2O3 capping layer thickness and TiN gate

Date

2019
Proceedings Paper
https://doi.org/10.5075/epfl-ICLAB-ICNF-269189
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Author(s)

Wang, Danghui
;
Simoen, Eddy  
;
Govoreanu, Bogdan  
;
Kubicek, Stefan  
;
Jussot, Julien  
;
Chan, BT  
;
Dumoulin Stuyck, Nard  
;
Radu, Iuliana  
;
Mocuta, Dan
;
Claeys, Cor

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1966 since deposited on 2021-10-27
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