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Low-frequency noise behavior of nMOSFETs with different Al2O3 capping layer thickness and TiN gate

dc.contributor.authorWang, Danghui
dc.contributor.authorSimoen, Eddy
dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorKubicek, Stefan
dc.contributor.authorJussot, Julien
dc.contributor.authorChan, BT
dc.contributor.authorDumoulin Stuyck, Nard
dc.contributor.authorRadu, Iuliana
dc.contributor.authorMocuta, Dan
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-27T23:13:27Z
dc.date.available2021-10-27T23:13:27Z
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/34419
dc.sourceIIOimport
dc.titleLow-frequency noise behavior of nMOSFETs with different Al2O3 capping layer thickness and TiN gate
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorJussot, Julien
dc.contributor.imecauthorChan, BT
dc.contributor.imecauthorDumoulin Stuyck, Nard
dc.contributor.imecauthorRadu, Iuliana
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecJussot, Julien::0000-0002-2484-3462
dc.contributor.orcidimecChan, BT::0000-0003-2890-0388
dc.contributor.orcidimecRadu, Iuliana::0000-0002-7230-7218
dc.date.embargo9999-12-31
dc.identifier.doi10.5075/epfl-ICLAB-ICNF-269189
dc.source.peerreviewno
dc.source.beginpage188
dc.source.endpage191
dc.source.conference25th International Conference on Noise and Fluctuations ICNF2019
dc.source.conferencedate18/06/2019
dc.source.conferencelocationNeuchatel Switzerland
imec.availabilityPublished - open access


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