Show simple item record

Total-ionizing-dose effects on InGaAs FinFETs with improved gate stack

dc.contributor.authorZhao, Simeng E.
dc.contributor.authorBonaldo, Stefano
dc.contributor.authorWang, Pengfei
dc.contributor.authorZhang, En Xia
dc.contributor.authorWaldron, Niamh
dc.contributor.authorCollaert, Nadine
dc.contributor.authorPutcha, Vamsi
dc.contributor.authorLinten, Dimitri
dc.contributor.authorGerardin, Simone
dc.contributor.authorPaccagnella, Alessandro
dc.contributor.authorSchrimpf, Ronald D.
dc.contributor.authorReed, Robert A.
dc.contributor.authorFleetwood, Daniel M.
dc.date.accessioned2021-10-28T00:50:35Z
dc.date.available2021-10-28T00:50:35Z
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/34546
dc.sourceIIOimport
dc.titleTotal-ionizing-dose effects on InGaAs FinFETs with improved gate stack
dc.typeProceedings paper
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorPutcha, Vamsi
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecPutcha, Vamsi::0000-0003-1907-5486
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.source.peerreviewyes
dc.source.conferenceRadiation Effects on Devices & ICs 2019 - RADECS
dc.source.conferencedate16/09/2019
dc.source.conferencelocationMontpellier France
imec.availabilityPublished - imec


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following collection(s)

Show simple item record