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Detection of localised variation in the electronic properties of GaN grown by MOCVD and MBE using scanning tunneling microscopy

dc.contributor.authorHamilton, B.
dc.contributor.authorFerhah, K.
dc.contributor.authorDavidson, J.
dc.contributor.authorDawson, P.
dc.contributor.authorWhittaker, E.
dc.contributor.authorCheng, T. S.
dc.contributor.authorFoxon, C. T.
dc.contributor.authorBougrioua, Zahia
dc.contributor.authorThrush, E. J.
dc.contributor.authorHarris, J. J.
dc.contributor.authorLee, K. J.
dc.date.accessioned2021-10-06T11:16:25Z
dc.date.available2021-10-06T11:16:25Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3487
dc.sourceIIOimport
dc.titleDetection of localised variation in the electronic properties of GaN grown by MOCVD and MBE using scanning tunneling microscopy
dc.typeMeeting abstract
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage131
dc.source.conference3rd International Conference on Nitride Semiconductors - ICS3
dc.source.conferencedate04/07/1999
dc.source.conferencelocationMontpellier France
imec.availabilityPublished - open access


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