dc.contributor.author | Chen, Wen Chieh | |
dc.contributor.author | Chen, Shih-Hung | |
dc.contributor.author | Hellings, Geert | |
dc.contributor.author | Chiarella, Thomas | |
dc.contributor.author | Chen, Jie | |
dc.contributor.author | Subramanian, Sujith | |
dc.contributor.author | Siew, Yong Kong | |
dc.contributor.author | Linten, Dimitri | |
dc.contributor.author | Groeseneken, Guido | |
dc.date.accessioned | 2021-10-28T20:40:54Z | |
dc.date.available | 2021-10-28T20:40:54Z | |
dc.date.issued | 2020 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/34888 | |
dc.source | IIOimport | |
dc.title | Understanding ESD characteristics of GGNMOS in bulk FinFET technology | |
dc.type | Proceedings paper | |
dc.contributor.imecauthor | Chen, Wen Chieh | |
dc.contributor.imecauthor | Chen, Shih-Hung | |
dc.contributor.imecauthor | Hellings, Geert | |
dc.contributor.imecauthor | Chiarella, Thomas | |
dc.contributor.imecauthor | Chen, Jie | |
dc.contributor.imecauthor | Subramanian, Sujith | |
dc.contributor.imecauthor | Siew, Yong Kong | |
dc.contributor.imecauthor | Linten, Dimitri | |
dc.contributor.imecauthor | Groeseneken, Guido | |
dc.contributor.orcidimec | Hellings, Geert::0000-0002-5376-2119 | |
dc.contributor.orcidimec | Chiarella, Thomas::0000-0002-6155-9030 | |
dc.contributor.orcidimec | Subramanian, Sujith::0000-0001-8938-9750 | |
dc.contributor.orcidimec | Linten, Dimitri::0000-0001-8434-1838 | |
dc.contributor.orcidimec | Groeseneken, Guido::0000-0003-3763-2098 | |
dc.source.peerreview | yes | |
dc.source.conference | 42nd Annual EOS/ESD Symposium 2020 | |
dc.source.conferencedate | 13/09/2020 | |
dc.source.conferencelocation | Reno, NV (online) USA | |
dc.identifier.url | https://ieeexplore.ieee.org/document/9241355 | |
imec.availability | Published - imec | |