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Total-ionizing-dose response of hghly-scaled gate-all-around Si nanowire CMOS transistors

dc.contributor.authorGorchichko, Maria
dc.contributor.authorZhang, E.X.
dc.contributor.authorWang, P.
dc.contributor.authorSchrimpf, R.
dc.contributor.authorReed, R.
dc.contributor.authorFleetwood, D.M.
dc.contributor.authorBonaldo, S.
dc.contributor.authorLinten, Dimitri
dc.contributor.authorMitard, Jerome
dc.date.accessioned2021-10-28T22:03:17Z
dc.date.available2021-10-28T22:03:17Z
dc.date.issued2020
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/35192
dc.sourceIIOimport
dc.titleTotal-ionizing-dose response of hghly-scaled gate-all-around Si nanowire CMOS transistors
dc.typeProceedings paper
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorMitard, Jerome
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.source.peerreviewyes
dc.source.beginpageC-4
dc.source.conferenceNuclear & Space Radiation Effects Conference - NSREC
dc.source.conferencedate20/07/2020
dc.source.conferencelocationSanta Fe USA
dc.identifier.urlhttp://www.nsrec.com/2020_session-c.html
imec.availabilityPublished - imec


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