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Electrical properties and reliability of ultrathin remote plasma enhanced CVD Si3N4 layers

dc.contributor.authorHoussa, Michel
dc.contributor.authorDegraeve, Robin
dc.contributor.authorPomarede, C.
dc.contributor.authorvan Dijk, Kitty
dc.contributor.authorWerkhoven, Chris
dc.contributor.authorMertens, Paul
dc.contributor.authorHeyns, Marc
dc.contributor.authorStesmans, Andre
dc.date.accessioned2021-10-06T11:22:55Z
dc.date.available2021-10-06T11:22:55Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3520
dc.sourceIIOimport
dc.titleElectrical properties and reliability of ultrathin remote plasma enhanced CVD Si3N4 layers
dc.typeOral presentation
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorMertens, Paul
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorStesmans, Andre
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.conference30th IEEE Semiconductor Interface Specialists Conference
dc.source.conferencedate2/12/1999
dc.source.conferencelocationCharleston, VA USA
imec.availabilityPublished - open access


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