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Investigation of low temperature SiP epitaxy on 300 mm Si substrates

dc.contributor.authorKhazaka, Rami
dc.contributor.authorLima, Lucas
dc.contributor.authorRosseel, Erik
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorD'Costa, Vijay
dc.contributor.authorMargetis, Joe
dc.contributor.authorTolle, John
dc.contributor.authorXie, Qi
dc.date.accessioned2021-10-28T23:17:57Z
dc.date.available2021-10-28T23:17:57Z
dc.date.issued2020
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/35384
dc.sourceIIOimport
dc.titleInvestigation of low temperature SiP epitaxy on 300 mm Si substrates
dc.typeMeeting abstract
dc.contributor.imecauthorKhazaka, Rami
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorXie, Qi
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.source.peerreviewyes
dc.source.beginpageG03-1734
dc.source.conferenceECS Prime 2020
dc.source.conferencedate4/10/2020
dc.source.conferencelocationHonolulu, HI USA
dc.identifier.urlhttps://ecs.confex.com/ecs/prime2020/meetingapp.cgi/Paper/136934
imec.availabilityPublished - imec


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