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Observation of dynamic VTH of p-GaN gate HEMTs by fast sweeping characterization

dc.contributor.authorLi, Xiangdong
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorWu, Zhicheng
dc.contributor.authorAmirifar, Nooshin
dc.contributor.authorYou, Shuzhen
dc.contributor.authorPosthuma, Niels
dc.contributor.authorZhao, Ming
dc.contributor.authorLiang, Hu
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2021-10-28T23:55:55Z
dc.date.available2021-10-28T23:55:55Z
dc.date.issued2020
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/35471
dc.sourceIIOimport
dc.titleObservation of dynamic VTH of p-GaN gate HEMTs by fast sweeping characterization
dc.typeJournal article
dc.contributor.imecauthorLi, Xiangdong
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorWu, Zhicheng
dc.contributor.imecauthorAmirifar, Nooshin
dc.contributor.imecauthorYou, Shuzhen
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorLiang, Hu
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.identifier.doi10.1109/LED.2020.2972971
dc.source.peerreviewyes
dc.source.beginpage577
dc.source.endpage580
dc.source.journalIEEE Electron Device Letters
dc.source.issue4
dc.source.volume41
imec.availabilityPublished - open access


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