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Epitaxial growth of active Si on top of SiGe etch stop layer in view of 3D device integration

dc.contributor.authorLoo, Roger
dc.contributor.authorJourdain, Anne
dc.contributor.authorRengo, Gianluca
dc.contributor.authorPorret, Clément
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorLiebens, Maarten
dc.contributor.authorBecker, Lucas
dc.contributor.authorStorck, Peter
dc.contributor.authorBeyer, Gerald
dc.contributor.authorBeyne, Eric
dc.date.accessioned2021-10-29T00:10:02Z
dc.date.available2021-10-29T00:10:02Z
dc.date.issued2020-07
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/35501
dc.sourceIIOimport
dc.titleEpitaxial growth of active Si on top of SiGe etch stop layer in view of 3D device integration
dc.typeMeeting abstract
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorJourdain, Anne
dc.contributor.imecauthorRengo, Gianluca
dc.contributor.imecauthorPorret, Clément
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorLiebens, Maarten
dc.contributor.imecauthorBeyer, Gerald
dc.contributor.imecauthorBeyne, Eric
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecPorret, Clément::0000-0002-4561-348X
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecBeyne, Eric::0000-0002-3096-050X
dc.source.peerreviewyes
dc.source.beginpageG03-1640
dc.source.conferenceECS 2020 Fall Meeting (PRiME): Symposium G01 Semiconductor Wfr Bonding; Science Technology and Applications 16
dc.source.conferencedate4/10/2020
dc.source.conferencelocationHonolulu USA
dc.identifier.urlhttps://ecs.confex.com/ecs/prime2020/meetingapp.cgi/Paper/137070
imec.availabilityPublished - imec


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