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Simulation study: the effect of random dopants and random traps on hot-carrier degration in nFinFETs

dc.contributor.authorMakarov, A.
dc.contributor.authorKaczer, Ben
dc.contributor.authorRoussel, Philippe
dc.contributor.authorVaisman Chasin, Adrian
dc.contributor.authorVandemaele, Michiel
dc.contributor.authorHellings, Geert
dc.contributor.authorEl-Sayed, A.M.
dc.contributor.authorJech, M.
dc.contributor.authorGrasser, T.
dc.contributor.authorLinten, Dimitri
dc.contributor.authorTyaginov, Stanislav
dc.date.accessioned2021-10-29T00:25:20Z
dc.date.available2021-10-29T00:25:20Z
dc.date.issued2020
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/35534
dc.sourceIIOimport
dc.titleSimulation study: the effect of random dopants and random traps on hot-carrier degration in nFinFETs
dc.typeProceedings paper
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorVaisman Chasin, Adrian
dc.contributor.imecauthorVandemaele, Michiel
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorTyaginov, Stanislav
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecVaisman Chasin, Adrian::0000-0002-9940-0260
dc.contributor.orcidimecVandemaele, Michiel::0000-0003-0740-4115
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage609
dc.source.endpage610
dc.source.conferenceInternational Conference on Solid-State Devices and Materials - SSDM
dc.source.conferencedate2/09/2019
dc.source.conferencelocationNagoya Japan
imec.availabilityPublished - open access


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