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Electrical and DLTS Characterization of Gate Interfaces in GaN-based Trench-gate semi-vertical MOS devices

dc.contributor.authorMarek, Juraj
dc.contributor.authorMikolášek, Miroslav
dc.contributor.authorDrobnŭ, Jakub
dc.contributor.authorKozarik, Jozef
dc.contributor.authorChvála, Aleš
dc.contributor.authorGeens, Karen
dc.contributor.authorBorga, Matteo
dc.contributor.authorLiang, Hu
dc.contributor.authorYou, Shuzhen
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorStuchlíková, Lubica
dc.date.accessioned2021-10-29T00:30:57Z
dc.date.available2021-10-29T00:30:57Z
dc.date.issued2020
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/35545
dc.sourceIIOimport
dc.titleElectrical and DLTS Characterization of Gate Interfaces in GaN-based Trench-gate semi-vertical MOS devices
dc.typeProceedings paper
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorBorga, Matteo
dc.contributor.imecauthorLiang, Hu
dc.contributor.imecauthorYou, Shuzhen
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecBorga, Matteo::0000-0003-3087-6612
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewyes
dc.source.beginpage57
dc.source.endpage58
dc.source.conferenceSolid State Surfaces and Interfaces 2020 (SSSI)
dc.source.conferencedate23/11/2020
dc.source.conferencelocationSmolenice Slovakia
imec.availabilityPublished - imec


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