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The optimization of the cleaning process to remove residual bonds of SiC and Si-F after fluorocarbon plasma etch on the silicon surface

dc.contributor.authorKim, Young-Chang
dc.contributor.authorBaklanov, Mikhaïl
dc.contributor.authorConard, Thierry
dc.contributor.authorVanhaelemeersch, Serge
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-06T11:30:16Z
dc.date.available2021-10-06T11:30:16Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3556
dc.sourceIIOimport
dc.titleThe optimization of the cleaning process to remove residual bonds of SiC and Si-F after fluorocarbon plasma etch on the silicon surface
dc.typeProceedings paper
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorVanhaelemeersch, Serge
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecVanhaelemeersch, Serge::0000-0003-2102-7395
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage291
dc.source.endpage294
dc.source.conferenceUltra Clean Processing of Silicon Surfaces; Proceedings of the 4th International Symposium on Ultra Clean Processing of Silicon
dc.source.conferencedate21/09/1998
dc.source.conferencelocationOostende Belgium
imec.availabilityPublished - open access
imec.internalnotesSolid State Phenomena; Vols. 65-66


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