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Investigation of instrinsic transistor performance of advanced CMOS devices with 2.5 nm NO gate oxides

dc.contributor.authorKubicek, Stefan
dc.contributor.authorHenson, W. K.
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorBadenes, Gonçal
dc.contributor.authorJansen, Philippe
dc.contributor.authorvan Meer, Hans
dc.contributor.authorKerr, Daniel
dc.contributor.authorNaem, Abdalla
dc.contributor.authorDeferm, Ludo
dc.contributor.authorDe Meyer, Kristin
dc.date.accessioned2021-10-06T11:34:07Z
dc.date.available2021-10-06T11:34:07Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3575
dc.sourceIIOimport
dc.titleInvestigation of instrinsic transistor performance of advanced CMOS devices with 2.5 nm NO gate oxides
dc.typeProceedings paper
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorDeferm, Ludo
dc.contributor.imecauthorDe Meyer, Kristin
dc.source.peerreviewno
dc.source.beginpage823
dc.source.endpage826
dc.source.conferenceInternational Electron Devices Meeting. Technical Digest; 5-8 Dec. 1999; Washington, D.C., USA.
imec.availabilityPublished - imec


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