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Highly doped SiGe epitaxy in view of S/D applications

dc.contributor.authorRengo, Gianluca
dc.contributor.authorPorret, Clément
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorRosseel, Erik
dc.contributor.authorNakazaki, Nobuya
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorVantomme, Andre
dc.contributor.authorLoo, Roger
dc.date.accessioned2021-10-29T02:57:00Z
dc.date.available2021-10-29T02:57:00Z
dc.date.issued2020-07
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/35823
dc.sourceIIOimport
dc.titleHighly doped SiGe epitaxy in view of S/D applications
dc.typeMeeting abstract
dc.contributor.imecauthorRengo, Gianluca
dc.contributor.imecauthorPorret, Clément
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorNakazaki, Nobuya
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorVantomme, Andre
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecPorret, Clément::0000-0002-4561-348X
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewyes
dc.source.beginpageG03-1731
dc.source.conferenceECS2020 Fall Meeting: SiGe, Ge & Related Compounds: Materials, Processing and Devices
dc.source.conferencedate4/10/2020
dc.source.conferencelocationHonululu USA
dc.identifier.urlhttps://ecs.confex.com/ecs/prime2020/meetingapp.cgi/Paper/140141
imec.availabilityPublished - imec


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