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Highly doped SiGe epitaxy in view of S/D applications

dc.contributor.authorRengo, Gianluca
dc.contributor.authorPorret, Clément
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorRosseel, Erik
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorVantomme, Andre
dc.contributor.authorLoo, Roger
dc.date.accessioned2021-10-29T02:57:35Z
dc.date.available2021-10-29T02:57:35Z
dc.date.issued2020-09
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/35824
dc.sourceIIOimport
dc.titleHighly doped SiGe epitaxy in view of S/D applications
dc.typeProceedings paper
dc.contributor.imecauthorRengo, Gianluca
dc.contributor.imecauthorPorret, Clément
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorVantomme, Andre
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecPorret, Clément::0000-0002-4561-348X
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewyes
dc.source.beginpage27
dc.source.endpage36
dc.source.conferenceECS-2020 Prime Meeting: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 9
dc.source.conferencedate4/10/2020
dc.source.conferencelocationHonolulu, HI USA
dc.identifier.urlhttps://iopscience.iop.org/article/10.1149/09805.0027ecst/pdf
imec.availabilityPublished - imec
imec.internalnotesECS Transactions; Vol. 98, Issue 5 (5)


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