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Effect of inductively coupled electro-magnetic field on bottom oxide etch in a high aspect ratio trench

dc.contributor.authorSardo, Stefano
dc.contributor.authorPalombizio, Antonio
dc.contributor.authorRedolfi, Augusto
dc.contributor.authorMannarino, Manuel
dc.contributor.authorHaspeslagh, Luc
dc.date.accessioned2021-10-29T03:40:47Z
dc.date.available2021-10-29T03:40:47Z
dc.date.issued2020
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/35898
dc.sourceIIOimport
dc.titleEffect of inductively coupled electro-magnetic field on bottom oxide etch in a high aspect ratio trench
dc.typeProceedings paper
dc.contributor.imecauthorSardo, Stefano
dc.contributor.imecauthorPalombizio, Antonio
dc.contributor.imecauthorRedolfi, Augusto
dc.contributor.imecauthorMannarino, Manuel
dc.contributor.imecauthorHaspeslagh, Luc
dc.contributor.orcidimecSardo, Stefano::0000-0002-9302-8007
dc.source.peerreviewyes
dc.source.beginpage3
dc.source.endpage12
dc.source.conference237th ECS Meeting: Silicon Compatible Emerging Materials, Processing, and Technologiess for Advanced CMOS and post-CMOS Appl 10
dc.source.conferencedate10/05/2020
dc.source.conferencelocationBristol UK
dc.identifier.urlhttps://doi.org/10.1149/09703.0003ecst
imec.availabilityPublished - imec
imec.internalnotesECS Transactions; Vol. 97, Issue 3


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