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Comparison of the stability of the surface structure and H-termination of the H2 annealed and HF-last cleaned (100) silicon

dc.contributor.authorBender, Hugo
dc.contributor.authorLi, Li
dc.contributor.authorMertens, Paul
dc.contributor.authorCaymax, Matty
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-09-29T12:39:47Z
dc.date.available2021-09-29T12:39:47Z
dc.date.issued1994
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/35
dc.sourceIIOimport
dc.titleComparison of the stability of the surface structure and H-termination of the H2 annealed and HF-last cleaned (100) silicon
dc.typeProceedings paper
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorMertens, Paul
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorHeyns, Marc
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage355
dc.source.endpage358
dc.source.conferenceProceedings of the 2nd International Symposium on Ultra Clean Processing of Silicon Surfaces - UCPSS
dc.source.conferencedate19/09/1994
dc.source.conferencelocationBrugge Belgium
imec.availabilityPublished - open access


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