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FEOL dry etch process challenges of ultimate FinFET scaling and next generation device architectures beyond N3

dc.contributor.authorTao, Zheng
dc.contributor.authorZhang, Liping
dc.contributor.authorDupuy, Emmanuel
dc.contributor.authorChan, BT
dc.contributor.authorAltamirano Sanchez, Efrain
dc.contributor.authorLazzarino, Frederic
dc.date.accessioned2021-10-29T05:11:58Z
dc.date.available2021-10-29T05:11:58Z
dc.date.issued2020
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/36052
dc.sourceIIOimport
dc.titleFEOL dry etch process challenges of ultimate FinFET scaling and next generation device architectures beyond N3
dc.typeMeeting abstract
dc.contributor.imecauthorTao, Zheng
dc.contributor.imecauthorZhang, Liping
dc.contributor.imecauthorDupuy, Emmanuel
dc.contributor.imecauthorChan, BT
dc.contributor.imecauthorAltamirano Sanchez, Efrain
dc.contributor.imecauthorLazzarino, Frederic
dc.contributor.orcidimecDupuy, Emmanuel::0000-0003-3341-1618
dc.contributor.orcidimecChan, BT::0000-0003-2890-0388
dc.contributor.orcidimecLazzarino, Frederic::0000-0001-7961-9727
dc.source.peerreviewyes
dc.source.beginpage113290O
dc.source.conferenceAdvanced Etch Technology for Nanopatterning IX
dc.source.conferencedate23/02/2020
dc.source.conferencelocationSan Jose USA
dc.identifier.urlhttps://doi.org/10.1117/12.2552022
imec.availabilityPublished - imec
imec.internalnotesProceedings of SPIE; Vol. 11329


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