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Gate-All-Around nanosheet field-effect transistors for advanced logic and memory applications: integration and device features

dc.contributor.authorVeloso, Anabela
dc.contributor.authorMatagne, Philippe
dc.contributor.authorEneman, Geert
dc.contributor.authorMertens, Hans
dc.contributor.authorVaisman Chasin, Adrian
dc.contributor.authorSimoen, Eddy
dc.contributor.authorHoriguchi, Naoto
dc.date.accessioned2021-10-29T07:03:27Z
dc.date.available2021-10-29T07:03:27Z
dc.date.issued2020
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/36232
dc.sourceIIOimport
dc.titleGate-All-Around nanosheet field-effect transistors for advanced logic and memory applications: integration and device features
dc.typeProceedings paper
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorMatagne, Philippe
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorMertens, Hans
dc.contributor.imecauthorVaisman Chasin, Adrian
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecVaisman Chasin, Adrian::0000-0002-9940-0260
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.source.peerreviewyes
dc.source.beginpage23
dc.source.endpage33
dc.source.conference237th ECS Meeting - 'Dielectrics for Nanosystems 8: Materials Science, Processing, Reliability,and Manufacturing
dc.source.conferencedate10/05/2020
dc.source.conferencelocationBristol UK
dc.identifier.urlhttps://doi.org/10.1149/09701.0023ecst
imec.availabilityPublished - imec
imec.internalnotesECS Transactions; Vol. 97, Issue 1


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