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Conference contributions
Gate-All-Around nanowire & nanosheet FETs for advanced, ultra-scaled technologies (Keynote)
Publication:
Gate-All-Around nanowire & nanosheet FETs for advanced, ultra-scaled technologies (Keynote)
Date
2020
Meeting abstract
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Veloso, Anabela
;
Matagne, Philippe
;
Jang, Doyoung
;
Huynh Bao, Trong
;
Vaisman Chasin, Adrian
;
Simoen, Eddy
;
Eneman, Geert
;
De Keersgieter, An
;
Mertens, Hans
;
Horiguchi, Naoto
Journal
Abstract
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1968
since deposited on 2021-10-29
Acq. date: 2025-10-23
Citations
Metrics
Views
1968
since deposited on 2021-10-29
Acq. date: 2025-10-23
Citations