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Impact of EUV resist thickness on local critical dimension uniformities for sub-30 nm CD Via Patterning

dc.contributor.authorVincent, Benjamin
dc.contributor.authorMaslow, Mask
dc.contributor.authorBekaert, Joost
dc.contributor.authorMao, Ming
dc.contributor.authorErvin, Joseph
dc.date.accessioned2021-10-29T07:30:29Z
dc.date.available2021-10-29T07:30:29Z
dc.date.issued2020
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/36275
dc.sourceIIOimport
dc.titleImpact of EUV resist thickness on local critical dimension uniformities for sub-30 nm CD Via Patterning
dc.typeProceedings paper
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorBekaert, Joost
dc.contributor.imecauthorMao, Ming
dc.contributor.orcidimecBekaert, Joost::0000-0003-3075-3479
dc.source.peerreviewyes
dc.source.beginpage1132326
dc.source.conferenceExtreme Ultraviolet (EUV) Lithography XI, part of SPIE Advanced Lithography
dc.source.conferencedate23/02/2020
dc.source.conferencelocationSan Jose, CA US
dc.identifier.urlhttps://doi.org/10.1117/12.2551606
imec.availabilityPublished - imec


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