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Surface-potential-based compact model for the gate current of p-GaN gate HEMTs
Publication:
Surface-potential-based compact model for the gate current of p-GaN gate HEMTs
Date
2020
Journal article
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Wang, Jie
;
Chen, Zhanfei
;
You, Shuzhen
;
Zhou, Wenyong
;
Bakeroot, Benoit
;
Liu, Jun
;
Sun, Lingling
;
Decoutere, Stefaan
Journal
IEEE Transactions on Electron Devices
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1903
since deposited on 2021-10-29
Acq. date: 2025-10-27
Citations
Metrics
Views
1903
since deposited on 2021-10-29
Acq. date: 2025-10-27
Citations