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Analysis of selectively grown epitaxial Si1-xGex by spectroscopic ellipsometry and comparison with RBS and SIMS

dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.authorLibezny, Milan
dc.contributor.authorBlavier, G.
dc.contributor.authorBrijs, Bert
dc.contributor.authorGeenen, Luc
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-14T11:29:45Z
dc.date.available2021-10-14T11:29:45Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3634
dc.sourceIIOimport
dc.titleAnalysis of selectively grown epitaxial Si1-xGex by spectroscopic ellipsometry and comparison with RBS and SIMS
dc.typeProceedings paper
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage170
dc.source.endpage179
dc.source.conferenceAnalytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes
dc.source.conferencedate16/09/1999
dc.source.conferencelocationLeuven Belgium
imec.availabilityPublished - open access
imec.internalnotesElectrochemical Society Proceedings; Vol. PV 99-16


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