Show simple item record

Full quantummechanical treatment of charge leakage in MOS capacitors with ultra-thin oxide layers

dc.contributor.authorMagnus, Wim
dc.contributor.authorSchoenmaker, Wim
dc.date.accessioned2021-10-14T11:29:57Z
dc.date.available2021-10-14T11:29:57Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3647
dc.sourceIIOimport
dc.titleFull quantummechanical treatment of charge leakage in MOS capacitors with ultra-thin oxide layers
dc.typeProceedings paper
dc.contributor.imecauthorMagnus, Wim
dc.source.peerreviewno
dc.source.beginpage248
dc.source.endpage251
dc.source.conferenceESSDERC'99 - Proceedings of the 29th European Solid-State Device Research Conference; 13-15 September 1999; Leuven, Belgium.
dc.source.conferencelocation
imec.availabilityPublished - imec


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following collection(s)

Show simple item record