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Si1-xGex selective etchant for gate-all-around transistors

dc.contributor.authorHarada, Ken
dc.contributor.authorSuzuki, Tatsunobu
dc.contributor.authorKusano, Tomohiro
dc.contributor.authorTakeshita, Kan
dc.contributor.authorOniki, Yusuke
dc.contributor.authorAltamirano Sanchez, Efrain
dc.contributor.authorStruyf, Herbert
dc.contributor.authorHolsteyns, Frank
dc.date.accessioned2021-10-31T08:48:37Z
dc.date.available2021-10-31T08:48:37Z
dc.date.issued2021
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/36758
dc.sourceIIOimport
dc.titleSi1-xGex selective etchant for gate-all-around transistors
dc.typeProceedings paper
dc.contributor.imecauthorHarada, Ken
dc.contributor.imecauthorOniki, Yusuke
dc.contributor.imecauthorAltamirano Sanchez, Efrain
dc.contributor.imecauthorStruyf, Herbert
dc.contributor.imecauthorHolsteyns, Frank
dc.contributor.orcidimecOniki, Yusuke::0000-0002-6619-1327
dc.source.peerreviewyes
dc.source.beginpage71
dc.source.endpage78
dc.source.conferenceInternational Symposium on Ultra Clean Processing of Semiconductor Surfaces - UCPSS
dc.source.conferencedate22/09/2020
dc.source.conferencelocationMechelen Belgium
dc.identifier.urlhttps://doi.org/10.4028/www.scientific.net/SSP.314.71
imec.availabilityPublished - imec
imec.internalnotesSolid State Penomena; Vol. 314


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