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Characterization of annealing and dopant activation processes using Differential Hall Effect Metrology (DHEM)

dc.contributor.authorJoshi, Abhijeet
dc.contributor.authorRengo, Gianluca
dc.contributor.authorPorret, Clément
dc.contributor.authorLin, Kun-Lin
dc.contributor.authorChang, C-H.
dc.contributor.authorBasol, Bulent
dc.date.accessioned2021-10-31T09:05:03Z
dc.date.available2021-10-31T09:05:03Z
dc.date.issued2021
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/36823
dc.sourceIIOimport
dc.titleCharacterization of annealing and dopant activation processes using Differential Hall Effect Metrology (DHEM)
dc.typeProceedings paper
dc.contributor.imecauthorRengo, Gianluca
dc.contributor.imecauthorPorret, Clément
dc.contributor.orcidimecPorret, Clément::0000-0002-4561-348X
dc.source.peerreviewyes
dc.source.beginpage113
dc.source.conferenceSilicon Compatible Emerging Materials, Processes, and Technologies for Advanced CMOS and Post-CMOS Applications 11
dc.source.conferencedate30/05/2021
dc.source.conferencelocationChicago, IL USA
dc.identifier.urlhttps://doi.org/10.1149/10202.0113ecst
imec.availabilityPublished - imec
imec.internalnotesECS Transactions, Volume 102, Number 2


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