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Strain-related peculiarities of B incorporation in epitaxial Si1-xGex source/drain materials and their impact on electrical properties

dc.contributor.authorPorret, Clément
dc.contributor.authorRengo, Gianluca
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorRosseel, Erik
dc.contributor.authorAyyad, Mustafa
dc.contributor.authorMorris, Richard
dc.contributor.authorVantomme, Andre
dc.contributor.authorLoo, Roger
dc.date.accessioned2021-10-31T10:27:25Z
dc.date.available2021-10-31T10:27:25Z
dc.date.issued2021
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/37066
dc.sourceIIOimport
dc.titleStrain-related peculiarities of B incorporation in epitaxial Si1-xGex source/drain materials and their impact on electrical properties
dc.typeMeeting abstract
dc.contributor.imecauthorPorret, Clément
dc.contributor.imecauthorRengo, Gianluca
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorAyyad, Mustafa
dc.contributor.imecauthorMorris, Richard
dc.contributor.imecauthorVantomme, Andre
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecPorret, Clément::0000-0002-4561-348X
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecMorris, Richard::0000-0002-0902-7088
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.identifier.doi10.1149/MA2021-01341096mtgabs
dc.source.peerreviewyes
dc.source.beginpage1096
dc.source.conference239th ECS Meeting:H02: High Purity and High Mobility Semiconductors 16
dc.source.conferencedate30/05/2021
dc.source.conferencelocationChicago, IL USA
dc.identifier.urlhttps://doi.org/10.1149/MA2021-01341096mtgabs
imec.availabilityPublished - imec
imec.internalnotesECS Meet. Abstr. MA2021-01


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