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Radiation induced lattice defects in InGaP/InGaAs P-HEMTs and their effect on device performance

dc.contributor.authorOhyama, Hidenori
dc.contributor.authorSimoen, Eddy
dc.contributor.authorKuroda, S.
dc.contributor.authorClaeys, Cor
dc.contributor.authorTakami, Y.
dc.contributor.authorHakata, T.
dc.contributor.authorSunaga, H.
dc.date.accessioned2021-10-14T11:32:52Z
dc.date.available2021-10-14T11:32:52Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3727
dc.sourceIIOimport
dc.titleRadiation induced lattice defects in InGaP/InGaAs P-HEMTs and their effect on device performance
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage563
dc.source.endpage568
dc.source.conferenceProceedings of the 8th International Autumn Meeting Gettering and Defect Engineering in Semiconductor Technology - GADEST
dc.source.conferencedate25/09/1999
dc.source.conferencelocationHöör Sweden
imec.availabilityPublished - imec
imec.internalnotesSolid State Phenomena; Vol. 69-70


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