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Gas-phase surface proessing prior to 3.2nm gate oxidation

dc.contributor.authorRuzyllo, Jerzy
dc.contributor.authorRöhr, Erika
dc.contributor.authorBaeyens, Martien
dc.contributor.authorBearda, Twan
dc.contributor.authorMertens, Paul
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-14T11:36:15Z
dc.date.available2021-10-14T11:36:15Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3786
dc.sourceIIOimport
dc.titleGas-phase surface proessing prior to 3.2nm gate oxidation
dc.typeProceedings paper
dc.contributor.imecauthorMertens, Paul
dc.contributor.imecauthorHeyns, Marc
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage85
dc.source.endpage88
dc.source.conferenceUltra Clean Processing of Silicon Surfaces; Proceedings of the 4th International Symposium on Ultra Clean Processing of Silicon
dc.source.conferencedate21/09/1998
dc.source.conferencelocationOostende Belgium
imec.availabilityPublished - open access
imec.internalnotesSolid State Phenomena; Vols. 65-66


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