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Low Temperature Anneal of Electron Irradiation Induced Defects in p-Type Silicon

dc.contributor.authorTrauwaert, Marie-Astrid
dc.contributor.authorVanhellemont, Jan
dc.contributor.authorMaes, Herman
dc.contributor.authorVan Bavel, Mieke
dc.contributor.authorLangouche, G.
dc.contributor.authorClauws, P.
dc.date.accessioned2021-09-29T12:48:57Z
dc.date.available2021-09-29T12:48:57Z
dc.date.issued1994
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/379
dc.sourceIIOimport
dc.titleLow Temperature Anneal of Electron Irradiation Induced Defects in p-Type Silicon
dc.typeOral presentation
dc.contributor.imecauthorVan Bavel, Mieke
dc.source.peerreviewno
dc.source.conference1st International Conference on Materials for Microelectronics; October 17-19, 1994; Barcelona, Spain.
imec.availabilityPublished - imec


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