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Surround Gate Transistor With Epitaxially Grown Si Pillar and Simulation Study on Soft Error and Rowhammer Tolerance for DRAM
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Surround Gate Transistor With Epitaxially Grown Si Pillar and Simulation Study on Soft Error and Rowhammer Tolerance for DRAM
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Date
2021
Journal article
https://doi.org/10.1109/TED.2020.3045966
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Han, Jin-Woo
;
Kim, Jungsik
;
Beery, Dafna
;
Bozdag, K. Deniz
;
Cuevas, Peter
;
Levi, Amitay
;
Tain, Irwin
;
Tran, Khai
;
Walker, Andrew J.
;
Vadakupudhu Palayam, Senthil
;
Arreghini, Antonio
;
Furnemont, Arnaud
;
Meyappan, M.
Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
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1407
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Acq. date: 2025-12-13
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Views
1407
since deposited on 2021-11-02
2
last month
1
last week
Acq. date: 2025-12-13
Citations