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Scaled transistors with 2D materials from the 300mm fab

dc.contributor.authorAsselberghs, Inge
dc.contributor.authorSchram, Tom
dc.contributor.authorSmets, Quentin
dc.contributor.authorGroven, Benjamin
dc.contributor.authorBrems, Steven
dc.contributor.authorPhommahaxay, Alain
dc.contributor.authorCott, Daire
dc.contributor.authorDupuy, Emmanuel
dc.contributor.authorRadisic, Dunja
dc.contributor.authorde Marneffe, Jean-Francois
dc.contributor.authorThiam, Arame
dc.contributor.authorLi, Waikin
dc.contributor.authorDevriendt, Katia
dc.contributor.authorGaur, Abhinav
dc.contributor.authorVerreck, Devin
dc.contributor.authorMaurice, Thibaut
dc.contributor.authorLin, Dennis
dc.contributor.authorMorin, Pierre
dc.contributor.authorRadu, Iuliana
dc.date.accessioned2022-01-27T10:37:47Z
dc.date.available2021-11-02T16:05:16Z
dc.date.available2022-01-27T10:37:47Z
dc.date.issued2020
dc.identifier.issn2161-4636
dc.identifier.otherWOS:000615976200032
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/38203.3
dc.sourceWOS
dc.titleScaled transistors with 2D materials from the 300mm fab
dc.typeProceedings paper
dc.contributor.imecauthorAsselberghs, Inge
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorSmets, Quentin
dc.contributor.imecauthorGroven, Benjamin
dc.contributor.imecauthorBrems, Steven
dc.contributor.imecauthorPhommahaxay, Alain
dc.contributor.imecauthorCott, Daire
dc.contributor.imecauthorDupuy, Emmanuel
dc.contributor.imecauthorRadisic, Dunja
dc.contributor.imecauthorde Marneffe, Jean-Francois
dc.contributor.imecauthorThiam, Arame
dc.contributor.imecauthorLi, W.
dc.contributor.imecauthorDevriendt, K.
dc.contributor.imecauthorGaur, A.
dc.contributor.imecauthorVerreck, D.
dc.contributor.imecauthorMaurice, T.
dc.contributor.imecauthorLin, D.
dc.contributor.imecauthorMorin, P.
dc.contributor.imecauthorRadu, I. P.
dc.contributor.imecauthorLi, Waikin
dc.contributor.imecauthorDevriendt, Katia
dc.contributor.imecauthorGaur, Abhinav
dc.contributor.imecauthorVerreck, Devin
dc.contributor.imecauthorMaurice, Thibaut
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorMorin, Pierre
dc.contributor.imecauthorRadu, Iuliana
dc.contributor.orcidimecRadu, I. P.::0000-0002-7230-7218
dc.contributor.orcidimecSchram, Tom::0000-0003-1533-7055
dc.contributor.orcidimecSmets, Quentin::0000-0002-2356-5915
dc.contributor.orcidimecGroven, Benjamin::0000-0002-5781-7594
dc.contributor.orcidimecBrems, Steven::0000-0002-0282-8528
dc.contributor.orcidimecDupuy, Emmanuel::0000-0003-3341-1618
dc.contributor.orcidimecDevriendt, Katia::0000-0002-0662-7926
dc.contributor.orcidimecVerreck, Devin::0000-0002-3833-5880
dc.contributor.orcidimecMorin, Pierre::0000-0002-4637-496X
dc.contributor.orcidimecRadu, Iuliana::0000-0002-7230-7218
dc.identifier.eisbn978-1-7281-9735-7
dc.source.numberofpages2
dc.source.peerreviewyes
dc.source.beginpage67
dc.source.endpage68
dc.source.conferenceIEEE Silicon Nanoelectronics Workshop (SNW)
dc.source.conferencedateJUN 13-14, 2020
dc.source.conferencelocationVirtual
dc.source.journalna
imec.availabilityPublished - imec


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320.500.12860/38203.3*2022-01-27T10:32:27Zvalidation by library/open access desk
120.500.12860/382032021-11-02T16:05:16Z

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