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Single defect studies by means of random telegraph signals in submicron silicon MOSFETs

dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorLukyanchikova, N. B.
dc.contributor.authorPetrichuk, M. V.
dc.contributor.authorGarbar, N. P.
dc.date.accessioned2021-10-14T11:39:14Z
dc.date.available2021-10-14T11:39:14Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3829
dc.sourceIIOimport
dc.titleSingle defect studies by means of random telegraph signals in submicron silicon MOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage467
dc.source.endpage472
dc.source.conferenceProceedings of the 8th International Autumn Meeting Gettering and Defect Engineering in Semiconductor Technology - GADEST
dc.source.conferencedate25/09/1999
dc.source.conferencelocationHöör Sweden
imec.availabilityPublished - imec
imec.internalnotesSolid State Phenomena; Vol. 69-70


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