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Parasitic subthreshold drain current and low frequency noise in GaN/AlGaN metal-oxide-semiconductor high-electron-mobility field-effect-transistors
Publication:
Parasitic subthreshold drain current and low frequency noise in GaN/AlGaN metal-oxide-semiconductor high-electron-mobility field-effect-transistors
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Date
2020
Journal article
https://doi.org/10.1088/1361-6641/abce8c
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Takakura, Kenichiro
;
Putcha, Vamsi
;
Simoen, Eddy
;
Alian, AliReza
;
Peralagu, Uthayasankaran
;
Waldron, Niamh
;
Parvais, Bertrand
;
Collaert, Nadine
Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
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1823
since deposited on 2021-11-02
Acq. date: 2025-12-12
Citations
Metrics
Views
1823
since deposited on 2021-11-02
Acq. date: 2025-12-12
Citations