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Toward high-performance and reliable Ge channel devices for 2 nm node and beyond

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Authors
Arimura, H.; Capogreco, E.; Vohra, A.; Porret, C.; Loo, R.; Rosseel, E.; Hikavyy, A.; Cott, D.; Boccardi, G.; Witters, L.; Eneman, G.; Mitard, J.; Collaert, N.; Horiguchi, N.
DOI
10.1109/IEDM13553.2020.9372007
EISBN
978-1-7281-8888-1
ISSN
2380-9248
Conference
IEEE International Electron Devices Meeting (IEDM)
Title
Toward high-performance and reliable Ge channel devices for 2 nm node and beyond
Publication type
Proceedings paper
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320.500.12860/38542.32021-12-09T13:55:19Zvalidation by library/open access desk
220.500.12860/38542.22021-12-09T13:48:27Zvalidation by library/open access desk
120.500.12860/38542*2021-12-06T02:06:18Z

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