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Toward high-performance and reliable Ge channel devices for 2 nm node and beyond

dc.contributor.authorArimura, Hiroaki
dc.contributor.authorCapogreco, Elena
dc.contributor.authorVohra, Anurag
dc.contributor.authorPorret, Clément
dc.contributor.authorLoo, Roger
dc.contributor.authorRosseel, Erik
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorCott, Daire
dc.contributor.authorBoccardi, Guillaume
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorEneman, Geert
dc.contributor.authorMitard, Jerome
dc.contributor.authorCollaert, Nadine
dc.contributor.authorHoriguchi, Naoto
dc.date.accessioned2021-12-09T13:52:36Z
dc.date.available2021-12-06T02:06:18Z
dc.date.available2021-12-09T13:52:36Z
dc.date.issued2020
dc.identifier.issn2380-9248
dc.identifier.otherWOS:000717011600117
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/38542.2
dc.sourceWOS
dc.titleToward high-performance and reliable Ge channel devices for 2 nm node and beyond
dc.typeProceedings paper
dc.contributor.imecauthorArimura, H.
dc.contributor.imecauthorCapogreco, E.
dc.contributor.imecauthorVohra, A.
dc.contributor.imecauthorPorret, C.
dc.contributor.imecauthorLoo, R.
dc.contributor.imecauthorRosseel, E.
dc.contributor.imecauthorHikavyy, A.
dc.contributor.imecauthorCott, D.
dc.contributor.imecauthorBoccardi, G.
dc.contributor.imecauthorWitters, L.
dc.contributor.imecauthorEneman, G.
dc.contributor.imecauthorMitard, J.
dc.contributor.imecauthorCollaert, N.
dc.contributor.imecauthorHoriguchi, N.
dc.contributor.imecauthorArimura, Hiroaki
dc.contributor.imecauthorCapogreco, Elena
dc.contributor.imecauthorVohra, Anurag
dc.contributor.imecauthorPorret, Clément
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorCott, Daire
dc.contributor.imecauthorBoccardi, Guillaume
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecVohra, Anurag::0000-0002-2831-0719
dc.contributor.orcidimecPorret, Clément::0000-0002-4561-348X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecBoccardi, Guillaume::0000-0003-3226-4572
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.identifier.doi10.1109/IEDM13553.2020.9372007
dc.identifier.eisbn978-1-7281-8888-1
dc.source.numberofpages4
dc.source.peerreviewyes
dc.source.conferenceIEEE International Electron Devices Meeting (IEDM)
dc.source.conferencedateDEC 12-18, 2020
dc.source.conferencelocationSan Francisco, CA, USA
dc.source.journalna
imec.availabilityPublished - imec


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320.500.12860/38542.32021-12-09T13:55:19Zvalidation by library/open access desk
220.500.12860/38542.2*2021-12-09T13:48:27Zvalidation by library/open access desk
120.500.12860/385422021-12-06T02:06:18Z

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