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Toward high-performance and reliable Ge channel devices for 2 nm node and beyond

dc.contributor.authorArimura, H.
dc.contributor.authorCapogreco, E.
dc.contributor.authorVohra, A.
dc.contributor.authorPorret, C.
dc.contributor.authorLoo, R.
dc.contributor.authorRosseel, E.
dc.contributor.authorHikavyy, A.
dc.contributor.authorCott, D.
dc.contributor.authorBoccardi, G.
dc.contributor.authorWitters, L.
dc.contributor.authorEneman, G.
dc.contributor.authorMitard, J.
dc.contributor.authorCollaert, N.
dc.contributor.authorHoriguchi, N.
dc.date.accessioned2021-12-06T02:06:18Z
dc.date.available2021-12-06T02:06:18Z
dc.date.issued2020
dc.identifier.issn2380-9248
dc.identifier.otherWOS:000717011600117
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/38542
dc.sourceWOS
dc.titleToward high-performance and reliable Ge channel devices for 2 nm node and beyond
dc.typeProceedings paper
dc.contributor.imecauthorArimura, H.
dc.contributor.imecauthorCapogreco, E.
dc.contributor.imecauthorVohra, A.
dc.contributor.imecauthorPorret, C.
dc.contributor.imecauthorLoo, R.
dc.contributor.imecauthorRosseel, E.
dc.contributor.imecauthorHikavyy, A.
dc.contributor.imecauthorCott, D.
dc.contributor.imecauthorBoccardi, G.
dc.contributor.imecauthorWitters, L.
dc.contributor.imecauthorEneman, G.
dc.contributor.imecauthorMitard, J.
dc.contributor.imecauthorCollaert, N.
dc.contributor.imecauthorHoriguchi, N.
dc.identifier.doi10.1109/IEDM13553.2020.9372007
dc.identifier.eisbn978-1-7281-8888-1
dc.source.numberofpages4
dc.source.peerreviewyes
dc.source.conferenceIEEE International Electron Devices Meeting (IEDM)
dc.source.conferencedateDEC 12-18, 2020
imec.availabilityUnder review


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320.500.12860/38542.32021-12-09T13:55:19Zvalidation by library/open access desk
220.500.12860/38542.22021-12-09T13:48:27Zvalidation by library/open access desk
120.500.12860/38542*2021-12-06T02:06:18Z

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