Substrate RF Losses and Non-linearities in GaN-on-Si HEMT Technology

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dc.contributor.author	Yadav, S.
dc.contributor.author	Cardinael, P.
dc.contributor.author	Zhao, M.
dc.contributor.author	Vondkar, K.
dc.contributor.author	Khaled, A.
dc.contributor.author	Rodriguez, R.
dc.contributor.author	Vermeersch, B.
dc.contributor.author	Makovejev, S.
dc.contributor.author	Ekoga, E.
dc.contributor.author	Pottrain, A.
dc.contributor.author	Waldron, N.
dc.contributor.author	Raskin, J-P
dc.contributor.author	Parvais, B.
dc.contributor.author	Collaert, N.
dc.date.accessioned	2021-12-06T02:06:36Z
dc.date.available	2021-12-06T02:06:36Z
dc.date.issued	2020
dc.identifier.issn	2380-9248
dc.identifier.other	WOS:000717011600005
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/38551
dc.source	WOS
dc.title	Substrate RF Losses and Non-linearities in GaN-on-Si HEMT Technology
dc.type	Proceedings paper
dc.contributor.imecauthor	Yadav, S.
dc.contributor.imecauthor	Zhao, M.
dc.contributor.imecauthor	Vondkar, K.
dc.contributor.imecauthor	Khaled, A.
dc.contributor.imecauthor	Rodriguez, R.
dc.contributor.imecauthor	Vermeersch, B.
dc.contributor.imecauthor	Waldron, N.
dc.contributor.imecauthor	Parvais, B.
dc.contributor.imecauthor	Collaert, N.
dc.identifier.doi	10.1109/IEDM13553.2020.9371893
dc.identifier.eisbn	978-1-7281-8888-1
dc.source.numberofpages	4
dc.source.peerreview	yes
dc.source.conference	IEEE International Electron Devices Meeting (IEDM)
dc.source.conferencedate	DEC 12-18, 2020
imec.availability	Under review

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Version	Item	Date	Summary
2	20.500.12860/38551.2	2021-12-15T11:07:13Z	validation by library/open access desk
1	20.500.12860/38551*	2021-12-06T02:06:36Z