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Point defect formation near the epitaxial Ge(001) growth surface and the impact on phosphorus doping activation
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Point defect formation near the epitaxial Ge(001) growth surface and the impact on phosphorus doping activation
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Date
2021
Journal article
https://doi.org/10.1063/5.0064952
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Vohra, Anurag
;
Pourtois, Geoffrey
;
Loo, Roger
;
Vandervorst, Wilfried
Journal
JOURNAL OF APPLIED PHYSICS
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1919
since deposited on 2022-02-22
Acq. date: 2025-12-18
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1919
since deposited on 2022-02-22
Acq. date: 2025-12-18
Citations