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Low-frequency noise assessment of ferro-electric field-effect transistors with Si-doped HfO2 gate dielectric
Publication:
Low-frequency noise assessment of ferro-electric field-effect transistors with Si-doped HfO2 gate dielectric
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Date
2021
Journal article
https://doi.org/10.1063/5.0029833
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Simoen, Eddy
;
O'Sullivan, Barry
;
Ronchi, Nicolo
;
Van den Bosch, Geert
;
Linten, Dimitri
;
Van Houdt, Jan
Journal
AIP ADVANCES
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Downloads
326
since deposited on 2022-02-24
61
last month
15
last week
Acq. date: 2025-12-16
Views
1852
since deposited on 2022-02-24
1
last month
Acq. date: 2025-12-16
Citations