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Electrical assessment of gate oxide punchthrough in advanced polysilicon high density plasma etch.

dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorBeckx, Stephan
dc.contributor.authorDupas, Luc
dc.contributor.authorVanhaelemeersch, Serge
dc.contributor.authorDeferm, Ludo
dc.date.accessioned2021-10-14T11:46:00Z
dc.date.available2021-10-14T11:46:00Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3912
dc.sourceIIOimport
dc.titleElectrical assessment of gate oxide punchthrough in advanced polysilicon high density plasma etch.
dc.typeProceedings paper
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.imecauthorBeckx, Stephan
dc.contributor.imecauthorDupas, Luc
dc.contributor.imecauthorVanhaelemeersch, Serge
dc.contributor.imecauthorDeferm, Ludo
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.contributor.orcidimecVanhaelemeersch, Serge::0000-0003-2102-7395
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage54
dc.source.endpage57
dc.source.conference1st European Symposium on Plasma Process Induced Damage - ESPID1
dc.source.conferencedate25/11/1999
dc.source.conferencelocationToulouse France
imec.availabilityPublished - open access


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