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Influence of CH4H2 reactive ion etching on the electrical and optical properties of AlGaAs/InGaAs/GaAs heterostructures

dc.contributor.authorvan Es, C. M.
dc.contributor.authorEijkemans, T. J.
dc.contributor.authorWolter, J. H.
dc.contributor.authorPereira, Ricardo
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorVan Rossum, Marc
dc.date.accessioned2021-09-29T12:49:32Z
dc.date.available2021-09-29T12:49:32Z
dc.date.issued1994
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/391
dc.sourceIIOimport
dc.titleInfluence of CH4H2 reactive ion etching on the electrical and optical properties of AlGaAs/InGaAs/GaAs heterostructures
dc.typeOral presentation
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.conference1st International Conference on Materials for Microelectronics
dc.source.conferencedate17/10/1994
dc.source.conferencelocationBarcelona Spain
imec.availabilityPublished - open access
imec.internalnotesto be publ. Materials Science and Technology 11(1995)41-45


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