Enabling bottom-up nanoelectronics fabrication by selective sol-gel dielectric-on-dielectric deposition

Abstract

Self-aligned patterning schemes for microelectronics fabrication require area-selective deposition processes. In this context, a sol-gel-based selective dielectric-on-dielectric deposition with respect to metal is reported. The selective deposition is achieved by first de-wetting a solution from the lyophobic surface areas and second ensuring uniform organosilicate polymer deposition during a droplet drying on the lyophilic surface regions. The de-wetting occurs when a critical volume for de-wetting is reached as a result of capillary solution draining. De-wetting from 1 mu m wide lyophobic copper area separating lyophilic rectangular dielectric (SiO2) regions with a width as narrow as 4 mu m is demonstrated. The subsequent solution drying results in a 200 nm thick dielectric film.