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ALD Encapsulation of CVD WS2 for Stable and High-Performance FET Devices

dc.contributor.authorWu, Xiangyu
dc.contributor.authorLin, Dennis
dc.contributor.authorCott, Daire
dc.contributor.authorDe Marneffe, Jean-Francois
dc.contributor.authorGroven, Benjamin
dc.contributor.authorSergeant, Stefanie
dc.contributor.authorShi, Yuanyuan
dc.contributor.authorSmets, Quentin
dc.contributor.authorSutar, Surajit
dc.contributor.authorAsselberghs, Inge
dc.contributor.authorRadu, Iuliana
dc.date.accessioned2022-03-16T13:59:37Z
dc.date.available2022-03-16T13:59:37Z
dc.date.issued2021
dc.identifier.issnna
dc.identifier.otherWOS:000675595800126
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/39455
dc.sourceWOS
dc.titleALD Encapsulation of CVD WS2 for Stable and High-Performance FET Devices
dc.typeProceedings paper
dc.contributor.imecauthorWu, Xiangyu
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorCott, Daire
dc.contributor.imecauthorDe Marneffe, Jean-Francois
dc.contributor.imecauthorGroven, Benjamin
dc.contributor.imecauthorSergeant, Stefanie
dc.contributor.imecauthorShi, Yuanyuan
dc.contributor.imecauthorSmets, Quentin
dc.contributor.imecauthorSutar, Surajit
dc.contributor.imecauthorAsselberghs, Inge
dc.contributor.imecauthorRadu, Iuliana
dc.contributor.orcidimecGroven, Benjamin::0000-0002-5781-7594
dc.contributor.orcidimecShi, Yuanyuan::0000-0002-4836-6752
dc.contributor.orcidimecSmets, Quentin::0000-0002-2356-5915
dc.contributor.orcidimecRadu, Iuliana::0000-0002-7230-7218
dc.contributor.orcidimecSergeant, Stefanie::0000-0001-9923-0903
dc.identifier.doi10.1109/EDTM50988.2021.9420940
dc.identifier.eisbn978-1-7281-8176-9
dc.source.numberofpages3
dc.source.peerreviewyes
dc.source.conference5th IEEE Electron Devices Technology and Manufacturing Conference (EDTM)
dc.source.conferencedateAPR 08-11, 2021
dc.source.conferencelocationChengdu
dc.source.journalna
imec.availabilityPublished - imec


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