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dc.contributor.authorBanerjee, Kaustuv
dc.contributor.authorBreuil, Laurent
dc.contributor.authorMilenin, Alexey
dc.contributor.authorPak, Murat
dc.contributor.authorStiers, Jimmy
dc.contributor.authorMcMitchell, Sean
dc.contributor.authorDi Piazza, Luca
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorVan Houdt, Jan
dc.date.accessioned2022-03-17T11:08:24Z
dc.date.available2022-03-17T11:08:24Z
dc.date.issued2021
dc.identifier.issn2330-7978
dc.identifier.otherWOS:000681328500009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/39483
dc.sourceWOS
dc.titleFirst demonstration of ferroelectric Si:Hf0(2) based 3D FE-FET with trench architecture for dense non-volatile memory application
dc.typeProceedings paper
dc.contributor.imecauthorBanerjee, Kaustuv
dc.contributor.imecauthorBreuil, Laurent
dc.contributor.imecauthorMilenin, Alexey
dc.contributor.imecauthorPak, Murat
dc.contributor.imecauthorStiers, Jimmy
dc.contributor.imecauthorMcMitchell, Sean
dc.contributor.imecauthorDi Piazza, Luca
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecBanerjee, Kaustuv::0000-0001-8003-6211
dc.contributor.orcidimecBreuil, Laurent::0000-0003-2869-1651
dc.contributor.orcidimecMilenin, Alexey::0000-0003-0747-0462
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.contributor.orcidimecVan Houdt, Jan::1234-1234-1234-1235
dc.identifier.doi10.1109/IMW51353.2021.9439620
dc.identifier.eisbn978-1-7281-8517-0
dc.source.numberofpages4
dc.source.peerreviewyes
dc.source.beginpage32
dc.source.endpage35
dc.source.conferenceIEEE International Memory Workshop (IMW)
dc.source.conferencedateMAY 16-19, 2021
dc.source.conferencelocationVirtual
dc.source.journalna
imec.availabilityPublished - imec


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