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Antenna effect in 65nm NMOS devices with 9.5nm thick HfOx gate dielectric
dc.contributor.author | Hiblot, Gaspard | |
dc.contributor.author | O'Sullivan, Barry | |
dc.contributor.author | Ronchi, Nicolo | |
dc.contributor.author | Banerjee, Kaustuv | |
dc.date.accessioned | 2022-03-25T02:07:41Z | |
dc.date.available | 2022-03-25T02:07:41Z | |
dc.date.issued | 2021 | |
dc.identifier.issn | 1930-8841 | |
dc.identifier.other | WOS:000764115800011 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/39513 | |
dc.source | WOS | |
dc.title | Antenna effect in 65nm NMOS devices with 9.5nm thick HfOx gate dielectric | |
dc.type | Proceedings paper | |
dc.contributor.imecauthor | Hiblot, Gaspard | |
dc.contributor.imecauthor | O'Sullivan, Barry | |
dc.contributor.imecauthor | Ronchi, Nicolo | |
dc.contributor.imecauthor | Banerjee, Kaustuv | |
dc.contributor.orcidimec | Hiblot, Gaspard::0000-0002-3869-965X | |
dc.contributor.orcidimec | O'Sullivan, Barry::0000-0002-9036-8241 | |
dc.contributor.orcidimec | Ronchi, Nicolo::0000-0002-7961-4077 | |
dc.contributor.orcidimec | Banerjee, Kaustuv::0000-0001-8003-6211 | |
dc.identifier.doi | 10.1109/IIRW53245.2021.9635612 | |
dc.identifier.eisbn | 978-1-6654-1794-5 | |
dc.source.numberofpages | 4 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 57 | |
dc.source.endpage | 60 | |
dc.source.conference | IEEE International Integrated Reliability Workshop (IIRW) / 4th Reliability Experts Forum | |
dc.source.conferencedate | OCT 04-29, 2021 | |
imec.availability | Under review |
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